WOLFRAM|DEMONSTRATIONS PROJECT

Electrical Conductivity of Silicon Semiconductors

​
material type:
Si
n-type
p-type
temperature (K)
300
dopant concentration (
14
10
-3
cm
)
2.5
General
:Exp[-6654.37] is too small to represent as a normalized machine number; precision may be lost.
This Demonstration shows the charge carrier concentration in silicon (Si) and doped Si (n- and p-types) as a function of temperature and dopant concentration. The corresponding electron band configurations are shown to the right of the plot. Phosphorous doping creates n-type Si, while boron doping creates p-type Si.