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Co-Sputtering Simulation (CO-SS)

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deposition plots
f
1
0.5
f
2
0.5
n
1
1
n
2
1
R
1
2
R
2
5
d
2
L
25
(a. u. stands for arbitrary units)
This Demonstration shows a simulation of CO-SS co-sputtering deposition. The purpose is to predict the properties of the thin films deposited by sputtering with a DC magnetron with a cathode compounded of two different targets. CO-SS resolves geometrically the
n
cos
β
related to the angular distribution of the evaporated atoms from the target (see Details). The distribution of each element in the film over the substrate, as well as the shape of the film deposit, are predicted.
The following constraints are assumed:1) The sticking coefficient of the atoms with the substrate is unity.2) The interaction of the evaporated atoms with the gas phase plasma is not considered.3) The incident angle of ions of the gas phase plasma with the targets is taken into account.4) The shape of the racetrack (the result of the sputtering) is also considered.
See the Details section for an explanation of the parameters and plots.
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