Electrical Conductivity of Silicon Semiconductors

This Demonstration shows the charge carrier concentration in silicon (Si) and doped Si (n- and p-types) as a function of temperature and dopant concentration. The corresponding electron band configurations are shown to the right of the plot. Phosphorous doping creates n-type Si, while boron doping creates p-type Si.

Details

The intrinsic carrier concentration (
C
i
) is:
C
i
=N
-
E
g
2
k
B
T
e
,
N=
N
0
2.54
(T/300)
,
where
N
is the effective density of states (
-3
cm
),
E
g
is the energy gap (eV),
k
B
is Boltzmann's constant (eV/K),
T
is temperature (K), and
N
0
is the effective density of states at 300 K.
The carrier concentration for pure silicon (
C
Si
) is:
C
Si
=5.29×
19
10
2.54
(T/300)
-6729/T
e
.
The carrier concentration for doped silicon (
C
Si,dop
) is:
C
Si,dop
=
C
Si
+
C
dop
-E/R/T
e
,
where
C
dop
is the atomic concentration of dopant atoms,
E
is the activation energy for the electron of a dopant atom, and
R
is the ideal gas constant.
All carrier concentration are in units of
-3
cm
.

External Links

Doped Silicon Semiconductors

Permanent Citation

Nathan S Nelson, Rachael L. Baumann, John L. Falconer
​
​"Electrical Conductivity of Silicon Semiconductors"​
​http://demonstrations.wolfram.com/ElectricalConductivityOfSiliconSemiconductors/​
​Wolfram Demonstrations Project​
​Published: September 21, 2015